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10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet flow3xmnpc 1 1200v/25a 3 phase mixed voltage component topology neutral point clamped inverter reactive power capability low inductance layout solar inverter ups 10-fy12m3a025sh-m746f08 10-F112M3A025SH-M746F09 tj=25c, unless otherwise specified parameter symbol value unit half bridge igbt (t1,t4,t5,t8,t9,t12) t h =80c 23 t c =80c 30 t j 150c v ce <=v ces t h =80c 58 t c =80c 88 t sc t j 150c 10 s v cc v ge =15v 800 v neutral p. fwd (d2,d3,d6,d7,d10,d11) t h =80c 17 t c =80c 23 t h =80c 28 t c =80c 43 t j =t j max 150 v a a w a v condition maximum junction temperature v ces i c power dissipation per diode p tot dc forward current dc collector current t j max power dissipation per igbt v ge flow1 housing target applications schematic features types maximum ratings short circuit ratings gate-emitter peak voltage turn off safe operating area 20 surge forward current collector-emitter break down voltage pulsed collector current p tot v rrm i cpulse peak repetitive reverse voltage i frm i f maximum junction temperature c 150 c w a a 175 600 t j max v t j =t j max t j =t j max 1200 75 75 t c =100c t p limited by t j max t j =t j max t p limited by t j max 12 mm 17 mm copyright vincotech 1 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet tj=25c, unless otherwise specified parameter symbol value unit condition maximum ratings neutral p. igbt (t2,t3,t6,t7,t10,t11) t h =80c 18 t c =80c 24 t j 150c v ce <=v ces t h =80c 31 t c =80c 47 t sc t j 150c 6 s v cc v ge =15v 360 v half bridge fwd (d1,d4,d5,d8,d9,d12) t h =80c 10 t c =80c 13 t h =80c 26 t c =80c 39 thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm 36 1200 600 60 20 clearance insulation voltage creepage distance t op operation temperature under switching condition peak repetitive reverse voltage t j =t j max c maximum junction temperature t j max 175 c storage temperature t stg -40+125 c -40+(tjmax - 25) t j =t j max i c t j =t j max dc forward current i f surge forward current i frm t p limited by t j max power dissipation per diode p tot v rrm pulsed collector current maximum junction temperature short circuit ratings t j =t j max t j max p tot v ge w a va 60 gate-emitter peak voltage v ces i cpuls power dissipation per igbt turn off safe operating area collector-emitter break down voltage va v c w aa dc collector current 175 t p limited by t j max copyright vincotech 2 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max tj=25c 5,2 5,8 6,4 tj=125c tj=25c 1,7 2,11 2,4 tj=125c 2,42 tj=25c 0,0024 tj=125c tj=25c 120 tj=125c tj=25c 73 tj=125c 74 tj=25c 15 tj=125c 18 tj=25c 166 tj=125c 220 tj=25c 21 tj=125c 116 tj=25c 0,17 tj=125c 0,30 tj=25c 0,37 tj=125c 0,63 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,64 k/w tj=25c 2,47 2,6 tj=125c 1,73 tj=25c 10 tj=150c tj=25c 16 tj=125c 22 tj=25c 23 tj=125c 33 tj=25c 0,19 tj=125c 0,44 di(rec)max tj=25c 1860 /dt tj=125c 1998 tj=25c 0,03 tj=125c 0,05 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 2,48 k/w v ? v none ns a a mws c mws a/s pf ns v ma nc na tj=25c 155 1430 tj=25c 20 15 15 15 600 vce=vge rgon=16 ? rgoff=16 ? 960 25 350 0 reverse recovered charge reverse recovery time reverse recovered energy peak rate of fall of recovery current output capacitance turn-off energy loss per pulse integrated gate resistor half bridge igbt (t1,t4,t5,t8,t9,t12) gate emitter threshold voltage 85 99 characteristic values value conditions turn-on delay time collector-emitter cut-off current incl. diode collector-emitter saturation voltage input capacitance rise time turn-on energy loss per pulse gate-emitter leakage current fall time turn-off delay time t f e on reverse transfer capacitance diode forward voltage gate charge reverse leakage current peak reverse recovery current q gate neutral p. fwd (d2,d3,d6,d7,d10,d11) i r erec i rrm q rr i ces c rss v f t r e off 0 c ies t d(on) v ge(th) v ce(sat) r gint i ges t d(off) 15 0 c oss rgon=16 ? f=1mhz t rr 350 1200 25 15 25 0,00085 15 15 copyright vincotech 3 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max characteristic values value conditions tj=25c 5 5,8 6,5 tj=125c tj=25c 1,1 1,53 1,9 tj=125c 1,70 tj=25c 0,0011 tj=125c tj=25c 300 tj=125c tj=25c 72 tj=125c 74 tj=25c 14 tj=125c 16 tj=25c 131 tj=125c 157 tj=25c 34 tj=125c 69 tj=25c 0,31 tj=125c 0,39 tj=25c 0,38 tj=125c 0,53 thermal resistance chip to heatsink per chip r thjh 3,09 tj=25c 2,18 2,65 tj=125c 2,30 tj=25c 60 tj=125c tj=25c 21 tj=125c 24 tj=25c 29,9 tj=125c 34,7 tj=25c 0,7 tj=125c 1,5 di(rec)max tj=25c 1972 /dt tj=125c 2214 tj=25c 0,14 tj=125c 0,38 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 3,65 k/w 3884 f k b-value b(25/100) k 3964 t=25c vincotech ntc reference t=25c t=25c 1200 b-value b(25/50) 32 none v ce =v ge rgon=16 ? thermal grease thickness 50um = 1 w/mk rgoff=16 ? f=1mhz reverse recovery energy e rec reverse recovery time peak rate of fall of recovery current t rr reverse recovered charge diode forward voltage reverse leakage current v f i r 20 15 15 0 15 q rr r i rrm power dissipation constant power dissipation p thermistor deviation of r100 rated resistance ? r/r r100=1486 ? -4,5 350 15 a ? t=25c t=25c t=100c 21511 15 8 mw/k mw % 3,5 +4,5 210 tj=25c 20 600 350 25 0 480 0,0012 20 ? ma na vv ns tj=25c pf nc 120 mws 71 1100 half bridge fwd (d1,d4,d5,d8,d9,d12) gate charge 0 rgon=16 ? input capacitance output capacitance c rss c oss c ies t f turn-off energy loss per pulse fall time t r t d(on) r gint i ges i ces v ce(sat) q gate e off t d(off) e on turn-on energy loss per pulse turn-off delay time collector-emitter saturation voltage collector-emitter cut-off incl diode rise time integrated gate resistor peak reverse recovery current v ge(th) gate emitter threshold voltage reverse transfer capacitance turn-on delay time gate-emitter leakage current neutral p. igbt (t2,t3,t6,t7,t10,t11) k/w mws c v ns a/s a 15 copyright vincotech 4 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 1 igbt figure 2 igbt typical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 250 s t p = 250 s t j = 25 c t j = 125 c v ge from 7 v to 17 v in steps of 1 v v ge from 7 v to 17 v in steps of 1 v figure 3 igbt figure 4 fwd typical transfer characteristics typical diode forward current as i c = f(v ge ) a function of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ce = 10 v half bridge typical output characteristics half bridge igbt & neutral point fwd 0 20 40 60 80 0 1 2 3 4 5 v ce (v) i c (a) 0 5 10 15 20 25 0 2 4 6 8 10 12 v ge (v) i c (a) t j = 25c t j = t jmax -25c 0 10 20 30 40 50 60 0 1 2 3 4 5 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 20 40 60 80 0 1 2 3 4 5 v ce (v) i c (a) copyright vincotech 5 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 5 igbt figure 6 igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/125 c t j = 25/125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 16 ? i c = 15 a r goff = 16 ? figure 7 fwd figure 8 fwd typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c ) e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/125 c t j = 25/125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 16 ? i c = 15 a half bridge half bridge igbt & neutral point fwd e on high t e off high t e on low t e off low t 0,0 0,2 0,4 0,6 0,8 1,0 0 5 10 15 20 25 30 i c (a) e (mws) e off high t e on high t e on low t e off low t 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0 16 32 48 64 80 r g ( ? ) e (mws) e rec high t e rec low t 0,00 0,02 0,04 0,06 0,08 0 5 10 15 20 25 30 i c (a) e (mws) e rec high t e rec low t 0 0,02 0,04 0,06 0,08 0 16 32 48 64 80 r g ( ? ) e (mws) copyright vincotech 6 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 9 igbt figure 10 igbt typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 125 c t j = 125 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 16 ? i c = 15 a r goff = 16 ? figure 11 fwd figure 12 fwd typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 15 a r gon = 16 ? v ge = 15 v half bridge half bridge igbt & neutral point fwd t doff t f t don t r 0,00 0,01 0,10 1,00 0 5 10 15 20 25 30 i c (a) t (ms) t rr high t t rr low t 0 0,02 0,04 0,06 0,08 0,1 0 16 32 48 64 80 r gon ( ? ) t rr (ms) t doff t f t don t r 0,00 0,01 0,10 1,00 0 16 32 48 64 80 r g ( ? ) t (ms) t rr high t t rr low t 0,00 0,01 0,02 0,03 0,04 0 5 10 15 20 25 30 i c (a) t rr (ms) copyright vincotech 7 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 13 fwd figure 14 fwd typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c ) q rr = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 15 a r gon = 16 ? v ge = 15 v figure 15 fwd figure 16 fwd typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c ) i rrm = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 15 a r gon = 16 ? v ge = 15 v half bridge igbt & neutral point fwd half bridge i rrm high t i rrm low t 0 10 20 30 40 50 0 16 32 48 64 80 r gon ( ? ) i rrm (a) q rr high t q rr low t 0 0,1 0,2 0,3 0,4 0,5 0,6 0 16 32 48 64 80 r gon ( w ) q rr ( c) i rrm high t i rrm low t 0 5 10 15 20 25 30 0 5 10 15 20 25 30 ic(a) i rrm (a) q rr high t q rr low t 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0 5 10 15 20 25 30 i c (a) q rr ( c) copyright vincotech 8 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 17 fwd figure 18 fwd typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 /dt,di rec /dt = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 350 v v r = 350 v v ge = 15 v i f = 15 a r gon = 16 ? v ge = 15 v figure 19 igbt figure 20 fwd igbt transient thermal impedance fwd transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p ) z thjh = f(t p ) at at d = t p / t d = t p / t r thjh = 1,64 k/w r thjh = 2,48 k/w igbt thermal model values fwd thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,20 7,2e-01 0,08 4,1e+00 0,61 1,3e-01 0,16 5,7e-01 0,53 4,6e-02 1,07 7,9e-02 0,21 9,8e-03 0,61 2,0e-02 0,09 1,3e-03 0,31 4,7e-03 0,25 9,2e-04 half bridge igbt & neutral point fwd half bridge t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di 0 /dt t di rec /dt t 0 1000 2000 3000 4000 5000 0 16 32 48 64 80 r gon ( ? ) di rec / dt (a/ms) di rec /dt t di o /dt t 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 i c (a) di rec / dt (a/ms) copyright vincotech 9 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 21 igbt figure 22 igbt power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i c = f(t h ) at at t j = 175 c t j = 175 c v ge = 15 v figure 23 fwd figure 24 fwd power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) at at t j = 150 c t j = 150 c half bridge igbt & neutral point fwd half bridge 0 25 50 75 100 125 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 0 50 100 150 200 t h ( o c) i c (a) 0 15 30 45 60 75 0 50 100 150 200 t h ( o c) p tot (w) 0 5 10 15 20 25 30 0 50 100 150 200 t h ( o c) i f (a) copyright vincotech 10 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 25 igbt figure 26 igbt safe operating area as a function gate voltage vs gate charge of collector-emitter voltage i c = f(v ce ) v ge = f(q g ) at at d = single pulse i c = 0 a th = 80 oc v ge = 15 v t j = t jmax oc half bridge half bridge igbt & neutral point fwd v ce (v) i c (a) 10 3 10 0 10 -1 10 1 10 2 10 1 10 2 100us 1ms 10ms 100ms dc 10 0 10 3 0 2 4 6 8 10 12 14 16 18 20 0 25 50 75 100 125 150 175 q g (nc) v ge (v) 240v 960v copyright vincotech 11 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 1 igbt figure 2 igbt typical output characteristics typical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 250 s t p = 250 s t j = 25 c t j = 126 c v ge from 7 v to 17 v in steps of 1 v v ge from 7 v to 17 v in steps of 1 v figure 3 igbt figure 4 fwd typical transfer characteristics typical diode forward current as i c = f(v ge ) a function of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ce = 10 v neutral point igbt & half bridge fwd neutral point 0 10 20 30 40 50 60 0 1 2 3 4 5 v ce (v) i c (a) 0 5 10 15 20 0 2 4 6 8 10 12 v ge (v) i c (a) t j = 25c t j = t jmax -25c 0 5 10 15 20 25 30 0 1 2 3 4 5 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 10 20 30 40 50 60 0 1 2 3 4 5 v ce (v) i c (a) copyright vincotech 12 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 5 igbt figure 6 igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/126 c t j = 25/126 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 16 ? i c = 15 a r goff = 16 ? figure 7 fwd figure 8 fwd typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c ) e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/126 c t j = 25/126 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 16 ? i c = 15 a neutral point neutral point igbt & half bridge fwd e rec high t e rec low t 0 0,1 0,2 0,3 0,4 0,5 0,6 0 5 10 15 20 25 30 i c (a) e (mws) e rec high t e rec low t 0 0,1 0,2 0,3 0,4 0,5 0,6 0 16 32 48 64 80 r g ( w ww w ) e (mws) e off high t e on high t e on low t e off low t 0 0,2 0,4 0,6 0,8 1 0 5 10 15 20 25 30 i c (a) e (mws) e off high t e on high t e on low t e off low t 0 0,2 0,4 0,6 0,8 1 0 16 32 48 64 80 r g ( w ww w ) e (mws) copyright vincotech 13 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 9 igbt figure 10 igbt typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 126 c t j = 126 c v ce = 350 v v ce = 350 v v ge = 15 v v ge = 15 v r gon = 16 ? i c = 15 a r goff = 16 ? figure 11 fwd figure 12 fwd typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/126 c t j = 25/126 c v ce = 350 v v r = 350 v v ge = 15 v i f = 15 a r gon = 16 ? v ge = 15 v neutral point neutral point igbt & half bridge fwd t doff t f t don t r 0,001 0,01 0,1 1 0 5 10 15 20 25 30 i c (a) t ( m s) t doff t f t don t r 0,001 0,01 0,1 1 0 10 20 30 40 50 60 70 r g ( w ww w ) t ( m s) t rr high t t rr low t 0,0 0,1 0,2 0,3 0,4 0,5 0 16 32 48 64 80 r gon ( ? ) t rr (ms) t rr high t t rr low t 0,00 0,01 0,02 0,03 0,04 0,05 0 5 10 15 20 25 30 i c (a) t rr (ms) copyright vincotech 14 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 13 fwd figure 14 fwd typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c ) q rr = f(r gon ) at at at t j = 25/126 c t j = 25/126 c v ce = 350 v v r = 350 v v ge = 15 v i f = 15 a r gon = 16 ? v ge = 15 v figure 15 fwd figure 16 fwd typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c ) i rrm = f(r gon ) at at t j = 25/126 c t j = 25/126 c v ce = 350 v v r = 350 v v ge = 15 v i f = 15 a r gon = 16 ? v ge = 15 v neutral point neutral point igbt & half bridge fwd i rrm high t i rrm low t 0 20 40 60 80 0 16 32 48 64 80 r gon ( ? ) i rrm (a) q rr high t q rr low t 0 0,5 1 1,5 2 0 16 32 48 64 80 r gon ( w ) q rr ( c) i rrm high t i rrm low t 0 10 20 30 40 0 5 10 15 20 25 30 i c (a) i rrm (a) q rr high t q rr low t 0,0 0,5 1,0 1,5 2,0 2,5 0 5 10 15 20 25 30 i c (a) q rr ( c) copyright vincotech 15 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 17 fwd figure 18 fwd typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 /dt,di rec /dt = f(r gon ) at at t j = 25/126 c t j = 25/126 c v ce = 350 v v r = 350 v v ge = 15 v i f = 15 a r gon = 16 ? v ge = 15 v figure 19 igbt figure 20 fwd igbt transient thermal impedance fwd transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p ) z thjh = f(t p ) at at d = tp / t d = tp / t r thjh = 3,09 k/w r thjh = 3,65 k/w igbt thermal model values fwd thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,09 1,8e+00 0,15 1,2e+00 0,37 2,7e-01 0,58 1,7e-01 1,74 6,9e-02 1,42 4,8e-02 0,36 1,4e-02 0,77 9,0e-03 0,25 3,4e-03 0,72 1,8e-03 0,24 4,1e-04 neutral point neutral point igbt & half bridge fwd t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di rec /dt t di 0 /dt t 0 2000 4000 6000 8000 0 16 32 48 64 80 r gon ( ? ) di rec / dt (a/ms) di 0 /dt t di rec /dt t 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 i c (a) di rec / dt (a/ms) copyright vincotech 16 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 21 igbt figure 22 igbt power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i c = f(t h ) at at t j = 175 oc t j = 175 oc v ge = 15 v figure 23 fwd figure 24 fwd power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) at at t j = 175 oc t j = 175 oc neutral point neutral point igbt & half bridge fwd 0 15 30 45 60 0 50 100 150 200 t h ( o c) p tot (w) 0 5 10 15 20 25 30 0 50 100 150 200 t h ( o c) i c (a) 0 15 30 45 60 0 50 100 150 200 th ( o c) p tot (w) 0 5 10 15 20 0 50 100 150 200 th ( o c) i f (a) copyright vincotech 17 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 1 thermistor typical ntc characteristic as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 4000 8000 12000 16000 20000 24000 25 50 75 100 125 t (c) r/ ? copyright vincotech 18 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet t j 125 c r gon 16 ? r goff 16 ? figure 1 half bridge igbt figure 2 half bridge igbt turn-off switching waveforms & definition of t doff , t eoff turn-on switching waveforms & definition of t don , t eon (t eoff = integrating time for e off ) (t eon = integrating time for e on ) v ge (0%) = -15 v v ge (0%) = -15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 15 a i c (100%) = 15 a t doff = 0,22 s t don = 0,07 s t eoff = 0,69 s t eon = 0,20 s figure 3 half bridge igbt figure 4 half bridge igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 15 a i c (100%) = 15 a t f = 0,12 s t r = 0,02 s switching definitions half bridge general conditions == = i c 1% v ce 90% v ge 90% -25 0 25 50 75 100 125 -0,2 0 0,2 0,4 0,6 0,8 time (us) % t doff t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% -50 0 50 100 150 200 250 2,9 2,95 3 3,05 3,1 3,15 3,2 time(us) % i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -25 0 25 50 75 100 125 0,05 0,1 0,15 0,2 0,25 0,3 0,35 time (us) % v ce i c t f i c 10% i c 90% -50 0 50 100 150 200 250 3,04 3,06 3,08 3,1 3,12 time(us) % t r v ce i c copyright vincotech 19 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 5 half bridge igbt figure 6 half bridge igbt turn-off switching waveforms & definition of t eoff turn-on switching waveforms & definition of t eon p off (100%) = 5,28 kw p on (100%) = 5,28 kw e off (100%) = 0,63 mj e on (100%) = 0,30 mj t eoff = 0,69 s t eon = 0,20 s figure 7 half bridge igbt figure 8 neutral point fwd gate voltage vs gate charge (measured) turn-off switching waveforms & definition of t rr v geoff = -15 v v d (100%) = 350 v v geon = 15 v i d (100%) = 15 a v c (100%) = 350 v i rrm (100%) = -22 a i c (100%) = 15 a t rr = 0,03 s q g = 180,95 nc switching definitions half bridge i c 1% v ge 90% -25 0 25 50 75 100 125 -0,2 0 0,2 0,4 0,6 0,8 time (us) % p off e off t eoff v ce 3% v ge 10% -50 0 50 100 150 200 2,95 3 3,05 3,1 3,15 3,2 time(us) % p on e on t eon -20 -15 -10 -5 0 5 10 15 20 -50 0 50 100 150 200 qg (nc) v ge (v) i rrm 10% i rrm 90% i rrm 100% t rr -150 -100 -50 0 50 100 150 3,06 3,08 3,1 3,12 3,14 time(us) % i d v d fitted copyright vincotech 20 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 9 half bridge igbt figure 10 half bridge igbt turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr ) (t erec = integrating time for e rec ) i d (100%) = 15 a p rec (100%) = 5,28 kw q rr (100%) = 0,44 c e rec (100%) = 0,05 mj t qrr = 0,07 s t erec = 0,07 s figure 11 half bridge stage switching measurement circuit half bridge switching measurement circuit switching definitions half bridge t qrr -150 -100 -50 0 50 100 150 3,06 3,08 3,1 3,12 3,14 3,16 time(us) % i d q rr -20 0 20 40 60 80 100 120 3,08 3,1 3,12 3,14 3,16 time(us) % p rec e rec t erec copyright vincotech 21 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet t j 125 c r gon 16 ? r goff 16 ? figure 1 neutral point igbt figure 2 neutral point igbt turn-off switching waveforms & definition of t doff , t eoff turn-on switching waveforms & definition of t don , t eon (t eoff = integrating time for e off ) (t eon = integrating time for e on ) v ge (0%) = -15 v v ge (0%) = -15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 15 a i c (100%) = 15 a t doff = 0,16 s t don = 0,07 s t eoff = 0,53 s t eon = 0,18 s figure 3 neutral point igbt figure 4 neutral point igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 15 a i c (100%) = 15 a t f = 0,069 s t r = 0,016 s switching definitions neutral point general conditions == = i c 10% v ge 10% t don v ce 3% -50 0 50 100 150 200 250 300 2,95 3 3,05 3,1 3,15 3,2 time(us) % i c v ce t eon v ge i c 1% v ce 90% v ge 90% -25 0 25 50 75 100 125 -0,1 0 0,1 0,2 0,3 0,4 0,5 time (us) % t doff t eoff v ce i c v ge fitted i c 10% i c 90% i c 60% i c 40% -25 0 25 50 75 100 125 0,0 0,1 0,2 0,3 0,4 time (us) % v ce i c t f i c10% i c 90% -50 0 50 100 150 200 250 300 3,06 3,08 3,1 3,12 3,14 3,16 time(us) % t r v ce i c copyright vincotech 22 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 5 neutral point igbt figure 6 neutral point igbt turn-off switching waveforms & definition of t eoff turn-on switching waveforms & definition of t eon p off (100%) = 5,26 kw p on (100%) = 5,26 kw e off (100%) = 0,53 mj e on (100%) = 0,30 mj t eoff = 0,53 s t eon = 0,18 s figure 7 neutral point igbt figure 8 half bridge fwd gate voltage vs gate charge (measured) turn-off switching waveforms & definition of t rr v geoff = -15 v v d (100%) = 350 v v geon = 15 v i d (100%) = 15 a v c (100%) = 350 v i rrm (100%) = -24 a i c (100%) = 15 a t rr = 0,04 s q g = 148 nc switching definitions neutral point i c 1% u ge 90% -25 0 25 50 75 100 125 -0,1 0 0,1 0,2 0,3 0,4 0,5 time (us) % p off e off t eoff u ce 3% u ge 10% -25 0 25 50 75 100 125 2,95 3 3,05 3,1 3,15 3,2 3,25 time(us) % p on e on t eon -20 -15 -10 -5 0 5 10 15 20 -50 0 50 100 150 200 q g (nc) u ge (v) i rrm 10% i rrm 90% i rrm 100% t rr -200 -150 -100 -50 0 50 100 150 3,06 3,08 3,1 3,12 3,14 3,16 3,18 time(us) % i d u d fitted copyright vincotech 23 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet figure 9 half bridge fwd figure 10 half bridge fwd turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr ) (t erec = integrating time for e rec ) i d (100%) = 15 a p rec (100%) = 5,26 kw q rr (100%) = 1,51 c e rec (100%) = 0,38 mj t qint = 1,00 s t erec = 1,00 s figure 11 neutral point stage switching measurement circuit switching definitions neutral point neutral point switching measurement circuit t qint -150 -100 -50 0 50 100 150 3 3,3 3,6 3,9 4,2 time(us) % i d q rr -25 0 25 50 75 100 125 3 3,3 3,6 3,9 4,2 time(us) % p rec e rec t erec copyright vincotech 24 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet version ordering code in datamatrix as in packaging bar code as without thermal paste 12mm housing 10-fy12m3a025sh-m7 46f08 m746f08 m746f08 without thermal paste 17mm housing 10-f112m3a025sh-m7 46f09 m746f09 m746f09 outline pinout ordering code & marking ordering code and marking - outline - pinout copyright vincotech 25 2014.12.18. / revision: 3
10-F112M3A025SH-M746F09 10-fy12m3a025sh-m746f08 datasheet disclaimer life support policy as used herein: the information given in this datasheet describes t he type of component and does not represent assured characteristics. for tested values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. vincotech does not assume any liability arising out of the applicatio n or use of any product or circuit described herein; neither does it convey any licens e under its patent rights, nor the rights of others . vincotech products are not authorised for use as cr itical components in life support devices or system s without the express written approval of vincotech. 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for u se provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform c an be reasonably expected to cause the failure of the life support device or sys tem, or to affect its safety or effectiveness. copyright vincotech 26 2014.12.18. / revision: 3

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